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US07141466B2 Method of fabricating semiconductor device having gate insulating film comprising a silicate nitride film with interface insulating film 有权
具有栅极绝缘膜的半导体器件的制造方法包括具有界面绝缘膜的硅酸盐氮化物膜

Method of fabricating semiconductor device having gate insulating film comprising a silicate nitride film with interface insulating film
摘要:
According to the present invention, there is provided a semiconductor device comprising:an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer;a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film;a gate electrode formed on said gate insulating film; andsource and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.
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