发明授权
US07141466B2 Method of fabricating semiconductor device having gate insulating film comprising a silicate nitride film with interface insulating film
有权
具有栅极绝缘膜的半导体器件的制造方法包括具有界面绝缘膜的硅酸盐氮化物膜
- 专利标题: Method of fabricating semiconductor device having gate insulating film comprising a silicate nitride film with interface insulating film
- 专利标题(中): 具有栅极绝缘膜的半导体器件的制造方法包括具有界面绝缘膜的硅酸盐氮化物膜
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申请号: US10962673申请日: 2004-10-13
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公开(公告)号: US07141466B2公开(公告)日: 2006-11-28
- 发明人: Motoyuki Sato , Kazuhiro Eguchi , Seiji Inumiya , Katsuyuki Sekine , Akio Kaneko
- 申请人: Motoyuki Sato , Kazuhiro Eguchi , Seiji Inumiya , Katsuyuki Sekine , Akio Kaneko
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2004-131523 20040427
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/8234
摘要:
According to the present invention, there is provided a semiconductor device comprising:an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer;a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film;a gate electrode formed on said gate insulating film; andsource and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.
公开/授权文献
- US20050236678A1 Semiconductor device and method of fabricating the same 公开/授权日:2005-10-27
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