A method and apparatus is provided for reducing the current in a memory device. Peripheral device control signals are translated to the wordline off voltage level, such as a negative wordline voltage. The translated signals prevent the peripheral devices from conducting current in the wordline off mode, even if a wordline-to-digitline short should occur. The control signals may include a column select signal for a column select device and an active pull-up signal for a sense amplifier, among others. Additionally, an equalization circuit having high and low resistance components is provided for the memory device. The equalization circuit limits current, even if a wordline-to-digitline short occurs.