发明授权
- 专利标题: Method and system for planarizing integrated circuit material
- 专利标题(中): 用于平面化集成电路材料的方法和系统
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申请号: US10947458申请日: 2004-09-22
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公开(公告)号: US07144301B2公开(公告)日: 2006-12-05
- 发明人: Kwang-Bok Kim , Jae-Kwang Choi , Yong-Sun Ko , Chang-Ki Hong , Kyung-Hyun Kim , Jae-Dong Lee
- 申请人: Kwang-Bok Kim , Jae-Kwang Choi , Yong-Sun Ko , Chang-Ki Hong , Kyung-Hyun Kim , Jae-Dong Lee
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理商 Monica H. Choi
- 优先权: KR10-2003-0069143 20031006
- 主分类号: B24B7/22
- IPC分类号: B24B7/22
摘要:
For planarizing an IC (integrate circuit) material, a first slurry is dispensed for a first planarization of the IC material using the first slurry, and a second slurry is dispensed for a second planarization of the IC material using the second slurry. The first and second slurries are different. For example, the first slurry is silica based for faster planarization during the first planarization. Thereafter, the second planarization is performed with the second slurry that is ceria based with higher planarity for attaining sufficient planarization of the IC material.
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