发明授权
- 专利标题： Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof
- 专利标题（中）： 含有镧和硼的肖特基电极的半导体器件及其制造方法
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申请号： US11032164申请日： 2005-01-11
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公开(公告)号： US07144765B2公开(公告)日： 2006-12-05
- 发明人: Yoshiharu Anda , Akiyoshi Tamura
- 申请人： Yoshiharu Anda , Akiyoshi Tamura
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2003-031214 20030207
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310, a GaAs buffer layer 321 that is formed on the semi-insulating GaAs substrate 310, AlGaAs buffer layer 322, a channel layer 323, a spacer layer 324, a carrier supply layer 325, a spacer layer 326, a Schottky layer 327 composed of an undoped In0.48Ga0.52P material, and an n+-type GaAs cap layer 328. A gate electrode 330 is formed on the Schottky layer 327, and is composed of LaB6 and has a Schottky contact with the Schottky layer 327, and ohmic electrodes 340 are formed on the n+-type GaAs cap layer 328.
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