发明授权
- 专利标题: NFETs using gate induced stress modulation
- 专利标题(中): 使用栅极诱导应力调制的NFET
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申请号: US10667601申请日: 2003-09-23
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公开(公告)号: US07144767B2公开(公告)日: 2006-12-05
- 发明人: Dureseti Chidambarrao , Omer H. Dokumaci , Oleg G. Gluschenkov
- 申请人: Dureseti Chidambarrao , Omer H. Dokumaci , Oleg G. Gluschenkov
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Greenblum & Bernstein, P.L.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号: H01L21/8249
- IPC分类号: H01L21/8249
摘要:
A method for manufacturing an integrated circuit comprising a plurality of semiconductor devices including an n-type field effect transistor and a p-type field effect transistor by covering the p-type field effect transistor with a mask, and oxidizing a portion of a gate polysilicon of the n-type field effect transistor, such that tensile mechanical stresses are formed within a channel of the n-type field effect transistor.
公开/授权文献
- US20050064646A1 NFETs using gate induced stress modulation 公开/授权日:2005-03-24