Invention Grant
- Patent Title: Method for pre-retaining CB opening
- Patent Title (中): 预先保留CB开口的方法
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Application No.: US11101007Application Date: 2005-04-06
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Publication No.: US07144799B2Publication Date: 2006-12-05
- Inventor: Yinan Chen , Jeng-Ping Lin , Feng-Chuan Lin
- Applicant: Yinan Chen , Jeng-Ping Lin , Feng-Chuan Lin
- Applicant Address: TW Taipei
- Assignee: Nan Ya Technology Corporation
- Current Assignee: Nan Ya Technology Corporation
- Current Assignee Address: TW Taipei
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room temperature to avoid damaging caused by conventional etching techniques. The LPD oxidation layer and the photo-resist are replaced easily by a polysilicon layer and a BPSG layer.
Public/Granted literature
- US20060228845A1 Method for pre-retaining CB opening Public/Granted day:2006-10-12
Information query
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