公开(公告)号：US20060228845A1

公开(公告)日：2006-10-12

申请号：US11101007

申请日：2005-04-06

申请人： Yinan Chen ,  Jeng-Ping Lin ,  Feng-Chuan Lin

发明人： Yinan Chen ,  Jeng-Ping Lin ,  Feng-Chuan Lin

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/76897 ,  H01L21/76895 ,  H01L27/10888

摘要： Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room temperature to avoid damaging caused by conventional etching techniques. The LPD oxidation layer and the photo-resist are replaced easily by a polysilicon layer and a BPSG layer.

公开(公告)号：US06872619B2

公开(公告)日：2005-03-29

申请号：US10620869

申请日：2003-07-16

申请人： Yi-Nan Chen ,  Tieh-Chiang Wu ,  Feng-Chuan Lin

发明人： Yi-Nan Chen ,  Tieh-Chiang Wu ,  Feng-Chuan Lin

IPC分类号： H01L21/76 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10864 ,  H01L27/10867

摘要： A method for forming a semiconductor device having a trench top isolation layer. A collar insulating layer is formed over a lower portion of the sidewall of the trench formed in a substrate. A first conductive layer is formed in the lower portion of the trench and protrudes the collar insulating layer, and a second conductive layer is formed overlying the first conductive layer and covers the collar insulating layer. An insulating spacer is formed over an upper portion of the sidewall of the trench and separated from the second conductive layer by a gap. The second conductive layer is partially thermally oxidized to form an oxide layer thereon whereby the gap is filled. After the oxide layer is removed, a reverse T-shaped insulating layer is formed thereon by chemical vapor deposition to serve as a trench top isolation layer. Finally, the insulating spacer is removed.

摘要翻译： 一种形成具有沟槽顶部隔离层的半导体器件的方法。 环形绝缘层形成在形成在衬底中的沟槽的侧壁的下部上。 第一导电层形成在沟槽的下部并突出轴环绝缘层，并且形成第二导电层，覆盖第一导电层并覆盖轴环绝缘层。 在沟槽的侧壁的上部形成绝缘间隔物，并与第二导电层隔开间隙。 第二导电层被部分地热氧化以在其上形成氧化物层，由此填充间隙。 在去除氧化物层之后，通过化学气相沉积在其上形成反向T形绝缘层，以用作沟槽顶部隔离层。 最后，去除绝缘垫片。

公开(公告)号：US20050158972A1

公开(公告)日：2005-07-21

申请号：US10759058

申请日：2004-01-20

申请人： Feng-Chuan Lin ,  Yi-Nan Chen ,  Ping Hsu

发明人： Feng-Chuan Lin ,  Yi-Nan Chen ,  Ping Hsu

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/8242

CPC分类号： H01L21/76897 ,  H01L27/10888

摘要： A method is disclosed for manufacturing bit line contact structures of semiconductor memories. The manufacturing method comprises the steps of providing a semiconductor substrate, forming a plurality of gates on the surface of the substrate, applying a first insulating layer to cover the surface of the substrate and the gates, selectively forming a plurality of gate contact windows at the locations of the gates, selectively forming bit line contact windows in the first insulating layer, the bit line contact windows contacting the substrate, and filling the gate contact windows and the bit line contact windows with a conductive layer.

摘要翻译： 公开了一种用于制造半导体存储器的位线接触结构的方法。 该制造方法包括以下步骤：提供半导体衬底，在衬底的表面上形成多个栅极，施加第一绝缘层以覆盖衬底和栅极的表面，并选择性地形成多个栅极接触窗口 栅极的位置，在第一绝缘层中选择性地形成位线接触窗口，与衬底接触的位线接触窗口，以及用导电层填充栅极接触窗口和位线接触窗口。

公开(公告)号：US20080108866A1

公开(公告)日：2008-05-08

申请号：US11593112

申请日：2006-11-06

申请人： Feng-Chuan Lin

发明人： Feng-Chuan Lin

IPC分类号： A61B1/00

CPC分类号： A61B1/00016 ,  A61B1/0002 ,  A61B1/00036 ,  A61B1/041 ,  A61B1/0684 ,  A61B5/073

摘要： The object of the present invention is to reveal how to control the operation of a capsule endoscope that has a memory storage device. The capsule endoscope is swallowed through the mouth to start the photographic inspection. During the process of operating the capsule endoscope, the built-in wireless receiving module is used to receive instructions and further to adjust the movement of capsule endoscope in order to achieve the inspection tasks; on completion of the photographic inspection, the capsule shell is cut open and connected to the host computer, and the image and data stored in the storage module are accessed through the host computer.

摘要翻译： 本发明的目的是揭示如何控制具有存储器装置的胶囊型内窥镜的操作。 胶囊内窥镜通过口腔吞咽开始照相检查。 在操作胶囊型内窥镜的过程中，内置无线接收模块用于接收指令，并进一步调整胶囊内窥镜的移动，以实现检查任务; 在拍摄检查完成后，将胶囊壳切开并连接到主计算机，并且通过主计算机访问存储在存储模块中的图像和数据。

公开(公告)号：US07144799B2

公开(公告)日：2006-12-05

申请号：US11101007

申请日：2005-04-06

申请人： Yinan Chen ,  Jeng-Ping Lin ,  Feng-Chuan Lin

发明人： Yinan Chen ,  Jeng-Ping Lin ,  Feng-Chuan Lin

IPC分类号： H01L21/44

CPC分类号： H01L21/76897 ,  H01L21/76895 ,  H01L27/10888

摘要： Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room temperature to avoid damaging caused by conventional etching techniques. The LPD oxidation layer and the photo-resist are replaced easily by a polysilicon layer and a BPSG layer.

摘要翻译： 公开了一种用于在DRAM制造工艺中预保留CB开口的方法，其中CB开口与在室温下填充的光致抗蚀剂层和LPD氧化层一起提供以避免由常规蚀刻技术引起的损坏。 LPD氧化层和光致抗蚀剂容易被多晶硅层和BPSG层所替代。