Invention Grant
- Patent Title: Radio frequency voltage controlled oscillator
- Patent Title (中): 射频压控振荡器
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Application No.: US10945906Application Date: 2004-09-22
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Publication No.: US07145407B2Publication Date: 2006-12-05
- Inventor: Sang-yoon Jeon , Heung-bae Lee , Chun-deok Suh
- Applicant: Sang-yoon Jeon , Heung-bae Lee , Chun-deok Suh
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lee & Morse, P.C.
- Priority: KR10-2003-0066024 20030923
- Main IPC: H03B12/00
- IPC: H03B12/00

Abstract:
A radio frequency voltage controlled oscillator (RF VCO) includes a differential oscillator including two field effect transistors (FETs) in which an electric current flows laterally to a substrate and a current source including a bipolar transistor in which the electric current flows in a direction either perpendicular or lateral to the substrate from an emitter to a collector via a base. Therefore, 1/f noise is very small. Resultantly, the RF VCO using the bipolar junction transistor as the current source reduces the 1/f noise generated by the current source of a RF CMOS VCO and, ultimately, the phase noise of the VCO.
Public/Granted literature
- US20050062553A1 Radio frequency voltage controlled oscillator Public/Granted day:2005-03-24
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