发明授权
US07148552B2 High voltage transistor having side-wall width different from side-wall width of a low voltage transistor
有权
具有与低压晶体管的侧壁宽度不同的侧壁宽度的高压晶体管
- 专利标题： High voltage transistor having side-wall width different from side-wall width of a low voltage transistor
- 专利标题（中）： 具有与低压晶体管的侧壁宽度不同的侧壁宽度的高压晶体管
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申请号： US10848248申请日： 2004-05-17
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公开(公告)号： US07148552B2公开(公告)日： 2006-12-12
- 发明人: Masayuki Fujio , Motoharu Arimura
- 申请人： Masayuki Fujio , Motoharu Arimura
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Morrison & Foerster LLP
- 优先权： JP2003-143113 20030521
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
The present invention has an object to provide a semiconductor device that is equipped with a high breakdown voltage transistor of a high junction breakdown voltage characteristic and a low voltage transistor of a high electric current drive characteristic to thereby ensure the element isolation performance in the both transistor forming regions. The semiconductor device is equipped with a high breakdown voltage transistor (a) and low voltage transistor (b) the widths of whose side walls are different from each other. The side walls of the high breakdown voltage transistor (a) each consist of four layers of first side wall film, second side wall film, third side wall film, and fourth side wall film that are formed in such a way that they are laminated from both side surfaces of a gate electrode in directions that are sidewardly remote away from this gate electrode. The side walls of the low voltage transistor (b) each consist of three layers of the first side wall film, the second side wall film, and the fourth side wall film that are formed in such a way that they are laminated from both side surfaces of a gate electrode in directions that are sidewardly remote away from this gate electrode.
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