发明授权
US07149121B2 Method and apparatus for changing operating conditions of nonvolatile memory
有权
用于改变非易失性存储器工作条件的方法和装置
- 专利标题: Method and apparatus for changing operating conditions of nonvolatile memory
- 专利标题(中): 用于改变非易失性存储器工作条件的方法和装置
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申请号: US11043550申请日: 2005-01-26
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公开(公告)号: US07149121B2公开(公告)日: 2006-12-12
- 发明人: Yu-Shen Lin , Hsien-Wen Hsu
- 申请人: Yu-Shen Lin , Hsien-Wen Hsu
- 申请人地址: TW Hsinchu
- 专利权人: Macronix International Co., Ltd.
- 当前专利权人: Macronix International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Haynes Beffel & Wolfeld LLP
- 代理商 Kenta Suzue
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
A nonvolatile memory array is associated with counting memory that stores data on a number of times a particular threshold state is reached in the associated nonvolatile memory. The aging physical characteristics of the nonvolatile memory can be compensated by adjusting the operating conditions of the nonvolatile memory. The operating conditions vary depending on the data stored in the counting memory.
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