In a method of affecting cleaning or chamber process control to remove residues of fluorinated discharges from internal PECVD chamber hardware during manufacture of a semiconductor or integrated circuit, the improvement of removing the fluorinated discharges without opening the chamber and without causing chamber downtime, comprising: a) maximizing H-atom concentration in a gas mix of a plasma containing H2 through the use of high rf power and low pressure to obtain an in-situ H2 plasma; and b) subjecting a reactor chamber containing build-up residues from previous chamber treatment with a fluorinated plasma, with the in-situ H2 plasma from step a) without opening the chamber and without shutting down the chamber to remove the build-up residues of the fluorinated plasma.