发明授权
US07151054B2 Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
有权
形成和利用抗反射材料层的半导体加工方法,以及形成晶体管栅叠层的方法
- 专利标题: Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
- 专利标题(中): 形成和利用抗反射材料层的半导体加工方法,以及形成晶体管栅叠层的方法
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申请号: US10805557申请日: 2004-03-19
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公开(公告)号: US07151054B2公开(公告)日: 2006-12-19
- 发明人: Gurtej S. Sandhu , Sujit Sharan
- 申请人: Gurtej S. Sandhu , Sujit Sharan
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
In one aspect, the invention includes a semiconductor processing method comprising exposing silicon, nitrogen and oxygen in gaseous form to a high density plasma during deposition of a silicon, nitrogen and oxygen containing solid layer over a substrate.In another aspect, the invention includes a gate stack forming method, comprising: a) forming a polysilicon layer over a substrate; b) forming a metal silicide layer over the polysilicon layer; c) depositing an antireflective material layer over the metal silicide utilizing a high density plasma; d) forming a layer of photoresist over the antireflective material layer; e) photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist; and f) transferring a pattern from the patterned masking layer to the antireflective material layer, metal silicide layer and is polysilicon layer to pattern the antireflective material layer, metal silicide layer and polysilicon layer into a gate stack.