- 专利标题: Thin film transistor array panel and manufacturing method thereof
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申请号: US10954524申请日: 2004-09-29
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公开(公告)号: US07151279B2公开(公告)日: 2006-12-19
- 发明人: Sahng-Ik Jun , Jae-Hong Jeon , Kwon-Young Choi , Jeong-Young Lee
- 申请人: Sahng-Ik Jun , Jae-Hong Jeon , Kwon-Young Choi , Jeong-Young Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: MacPherson Kwok Chen & Heid LLP
- 优先权: KR10-2003-0071092 20031013
- 主分类号: H01L29/04
- IPC分类号: H01L29/04
摘要:
A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.
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