发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10876462申请日： 2004-06-28
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公开(公告)号： US07151319B2公开(公告)日： 2006-12-19
- 发明人: Takashi Iida , Tatsuya Nagata , Seiji Miyamoto , Toshihiro Matsunaga
- 申请人： Takashi Iida , Tatsuya Nagata , Seiji Miyamoto , Toshihiro Matsunaga
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout and Kraus, LLP.
- 优先权： JP2003-183716 20030627
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/48 ; H01L29/40
摘要：
A BGA semiconductor device for high-speed operation and high pin counts has a base which is constituted by a core layer formed of wiring boards and surface layers provided on both sides of the core layer, and a semiconductor element mounted on the base. Through holes in a signal region of the core layer are disposed in an optimum through hole pattern in which power through holes and ground through holes are disposed adjacent to signal through holes.
公开/授权文献
- US20050017357A1 Semiconductor device 公开/授权日：2005-01-27
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