发明授权
- 专利标题： High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
- 专利标题（中）： 高性能静电夹具包括电阻层，微沟槽和电介质层
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申请号： US10420329申请日： 2003-04-22
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公开(公告)号： US07151658B2公开(公告)日： 2006-12-19
- 发明人: Peter L. Kellerman , Victor Benveniste , Michel Pharand , Dale K. Stone
- 申请人： Peter L. Kellerman , Victor Benveniste , Michel Pharand , Dale K. Stone
- 申请人地址： US MA Beverly
- 专利权人： Axcelis Technologies, Inc.
- 当前专利权人： Axcelis Technologies, Inc.
- 当前专利权人地址： US MA Beverly
- 代理机构： Dinsmore & Shohl LLP
- 主分类号： H02N13/00
- IPC分类号： H02N13/00
摘要：
An electrostatic clamp for securing a semiconductor wafer during processing. The electrostatic clamp includes a base member, a first dielectric layer, a second dielectric layer having a gas pressure distribution micro-groove network formed therein, a gas gap positioned between a backside of a semiconductor wafer and the second dielectric layer, and a pair of high voltage electrodes positioned between the first dielectric layer and the second dielectric layer.
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