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    System and method for controlling deflection of a charged particle beam within a graded electrostatic lens
    2.
    发明授权
    System and method for controlling deflection of a charged particle beam within a graded electrostatic lens 有权
    用于控制渐变静电透镜内的带电粒子束的偏转的系统和方法

    公开(公告)号：US08129695B2

    公开(公告)日：2012-03-06

    申请号：US12647950

    申请日：2009-12-28

    申请人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

    发明人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

    IPC分类号： G21K1/06

    CPC分类号： H01J37/3171 ,  H01J37/1477 ,  H01J2237/053 ,  H01J2237/12 ,  H01J2237/24514

    摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.

    摘要翻译： 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

    SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS
    3.
    发明申请
    SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS 有权
    控制抛光静电镜中带电粒子束的偏移的系统和方法

    公开(公告)号：US20110155921A1

    公开(公告)日：2011-06-30

    申请号：US12647950

    申请日：2009-12-28

    申请人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

    发明人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

    IPC分类号： G21K1/06 ,  H01J3/14

    CPC分类号： H01J37/3171 ,  H01J37/1477 ,  H01J2237/053 ,  H01J2237/12 ,  H01J2237/24514

    摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.

    摘要翻译： 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

    Floating sheet production apparatus and method
    7.
    发明授权
    Floating sheet production apparatus and method 有权
    浮板生产设备及方法

    公开(公告)号：US07855087B2

    公开(公告)日：2010-12-21

    申请号：US12403206

    申请日：2009-03-12

    申请人： Peter L. Kellerman ,  Frank Sinclair

    发明人： Peter L. Kellerman ,  Frank Sinclair

    IPC分类号： H01L21/00

    CPC分类号： H01L31/02 ,  C30B15/06 ,  C30B15/14 ,  C30B15/30 ,  C30B28/10 ,  C30B29/06

    摘要： This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.

    摘要翻译： 该片材生产设备包括限定被配置为保持熔体的通道的容器。 熔体构造成从通道的第一点流到第二点。 冷却板靠近熔体设置并且被配置成在熔体上形成片材。 溢流道设置在通道的第二点。 该溢流道构造成将片材与熔体分离。

    Architecture for ribbon ion beam ion implanter system
    10.
    发明授权
    Architecture for ribbon ion beam ion implanter system 有权
    带状离子束离子注入机系统的结构

    公开(公告)号：US07394079B2

    公开(公告)日：2008-07-01

    申请号：US11275772

    申请日：2006-01-27

    申请人： Kourosh Saadatmand ,  Peter L. Kellerman

    发明人： Kourosh Saadatmand ,  Peter L. Kellerman

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/3007 ,  H01J2237/0492

    摘要： An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam. The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV. The energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.

    摘要翻译： 公开了一种带状离子束离子注入机系统的结构。 在一个实施例中，该架构包括用于接收扇形带状离子束的加速/减速并行化透镜系统，并且至少将扇形带状离子束并行（并且也可能加速或减速）到基本上平行的带状离子束中，并且能量 过滤系统在加速/减速并行化透镜系统的下游，以及待通过基本上平行的带状离子束植入的工件之前。 加速/减速并行化透镜系统包括用于至少并行（也可能加速或减速）扇形带状离子束和用于加速或减速基本上平行的带状离子束的加速/减速透镜的透镜。 并行化透镜允许将高电流带状离子束以能够向下延伸至低至约200eV的能量传递到工件。 能量过滤系统提供基本上没有能量污染的基本平行的带状离子束。