Invention Grant
- Patent Title: Microelectromechanical structure and a method for making the same
- Patent Title (中): 微机电结构及其制造方法
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Application No.: US10805610Application Date: 2004-03-18
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Publication No.: US07153443B2Publication Date: 2006-12-26
- Inventor: Jonathan Doan , Satyadev Patel
- Applicant: Jonathan Doan , Satyadev Patel
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A microstructure and the method for making the same are disclosed herein. The microstructure has structural members, at least one of which comprises an intermetallic compound. In making such a microstructure, a sacrificial material is employed. After completion of forming the structural layers, the sacrificial material is removed by a spontaneous vapor phase chemical etchant.
Public/Granted literature
- US20060266730A1 MICROELECTROMECHANICAL STRUCTURE AND A METHOD FOR MAKING THE SAME Public/Granted day:2006-11-30
Information query
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