- 专利标题： Mask for photolithography, method of forming thin film, liquid crystal display device, and method of producing the liquid crystal display device
-
申请号： US10314528申请日： 2002-12-09
-
公开(公告)号： US07153614B2公开(公告)日： 2006-12-26
- 发明人: Masato Imai , Akira Maehara , Yoko Fukunaga
- 申请人： Masato Imai , Akira Maehara , Yoko Fukunaga
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Rockey, Depke, Lyons & Kitzinger LLC.
- 代理商 Robert J. Depke
- 优先权： JP2001-380338 20011213
- 主分类号： H01L21/027
- IPC分类号： H01L21/027
摘要：
A mask for photolithography in which a semi-transmission film is formed so that the phase difference of lights passing through a semi-transmission portion and a transmission portion of the mask for photolithography is between (−¼+2 m).π and (¼+2 m).π inclusive, where m is an integer. The invention makes it possible to efficiently and properly form a thin film having a multi-step structure by a single process.
公开/授权文献
信息查询
IPC分类:
