发明授权
- 专利标题： Ferroelectric capacitor having a substantially planar dielectric layer and a method of manufacture therefor
- 专利标题（中）： 具有基本上平面的电介质层的铁电电容器及其制造方法
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申请号： US10829053申请日： 2004-04-21
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公开(公告)号： US07153706B2公开(公告)日： 2006-12-26
- 发明人: Sanjeev Aggarwal , Kelly J. Taylor , Lindsey Hall , Satyavolu Srinivas Papa Rao
- 申请人： Sanjeev Aggarwal , Kelly J. Taylor , Lindsey Hall , Satyavolu Srinivas Papa Rao
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention provides a ferroelectric capacitor, a method of manufacture therefor, and a method of manufacturing a ferroelectric random access memory (FeRAM) device. The ferroelectric capacitor (100), among other elements, includes a substantially planar ferroelectric dielectric layer (165) located over a first electrode layer (160), wherein the substantially planar ferroelectric dielectric layer (165) has an average surface roughness of less than about 4 nm. The ferroelectric capacitor (100) further includes a second electrode layer (170) located over the substantially planar ferroelectric dielectric layer (165).
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