Invention Grant
- Patent Title: Integrated circuit capacitor structure
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Application No.: US10678531Application Date: 2003-10-03
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Publication No.: US07154162B2Publication Date: 2006-12-26
- Inventor: Jeong-Hoon Ahn , Kyungtae Lee , Mu-Kyung Jung , Yong-Jun Lee
- Applicant: Jeong-Hoon Ahn , Kyungtae Lee , Mu-Kyung Jung , Yong-Jun Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Marger Johnson & McCollom, P.C.
- Priority: KR10-2002-0063477 20021017
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
Public/Granted literature
- US20040075131A1 Integrated circuit capacitor structure Public/Granted day:2004-04-22
Information query
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