- 专利标题: Thin film magnetic memory device writing data with bidirectional current
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申请号: US11348359申请日: 2006-02-07
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公开(公告)号: US07154776B2公开(公告)日: 2006-12-26
- 发明人: Hideto Hidaka
- 申请人: Hideto Hidaka
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2001-394285 20011226; JP2002-288755 20021001
- 主分类号: G11C11/14
- IPC分类号: G11C11/14 ; G11C5/08 ; G11C7/00 ; G11C8/00 ; G11C11/15
摘要:
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the other end of the selected bit line and the other end of the current return line to one and the other of a power supply voltage and a ground voltage in accordance with a level of write data via one of first and second data buses and an inverted data bus, respectively.
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