发明授权
- 专利标题： Methods for fabricating thin film transistors
- 专利标题（中）： 制造薄膜晶体管的方法
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申请号： US11142930申请日： 2005-06-02
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公开(公告)号： US07157323B2公开(公告)日： 2007-01-02
- 发明人: Feng-Yuan Gan , Han-Tu Lin
- 申请人： Feng-Yuan Gan , Han-Tu Lin
- 申请人地址： TW Hsinchu
- 专利权人： Au Optronics Corp.
- 当前专利权人： Au Optronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Thomas, Kayden, Horstemeyer & Risley
- 优先权： TW93135857A 20041122
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L21/00 ; H01L21/84
摘要：
Fabrication methods for thin film transistors. A metal gate stack structure is formed on an insulating substrate. The substrate is performed using thermal annealing to create an oxide layer on the sidewalls of the metal gate stack structure. A gate insulating layer is formed on the substrate covering the metal gate stack structure. A semiconductor layer is formed on the gate insulating layer. A source/drain layer is formed on the semiconductor.
公开/授权文献
- US20060110871A1 Methods for fabricating thin film transistors 公开/授权日：2006-05-25
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