发明授权
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US11167429申请日： 2005-06-28
-
公开(公告)号： US07157772B2公开(公告)日： 2007-01-02
- 发明人: Hiroyoshi Ogura , Hisao Ichijo , Yoshinobu Sato , Teruhisa Ikuta
- 申请人： Hiroyoshi Ogura , Hisao Ichijo , Yoshinobu Sato , Teruhisa Ikuta
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2004-214412 20040722
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L31/062
摘要：
A gate electrode has an end extended over a part of a LOCOS oxide film, and a source electrode has an end extended further than the end of the gate electrode over a part of the LOCOS oxide film. An insulating film covering the gate electrode and the LOCOS oxide film is formed such that the thickness of the insulating film at an end-portion region, which is on an end portion of the gate electrode provided to extend over a part of the LOCOS oxide film, as viewed from a main surface of a supporting substrate, is smaller than the thickness of the insulating film below an end portion of the source electrode above the drain region and smaller than the thickness of the insulating film on an end portion of the gate electrode above a body region.
公开/授权文献
- US20060017105A1 Semiconductor device and method of fabricating the same 公开/授权日：2006-01-26
信息查询
IPC分类:
