Invention Grant
US07160742B2 Methods for integrated implant monitoring 有权
综合植入物监测方法

Methods for integrated implant monitoring
Abstract:
The invention relates to a method for real-time in-situ implantation and measurement incorporating a feedback loop to adjust the implantation dose of a substrate during the manufacturing and testing of semiconductor wafers. During processing, the substrate, such as a silicon wafer, is transported between a measuring device and an implantation device multiple times to ensure that where the beam from the implantation device hits the substrate, the doping concentration falls within the range of desired parameters.
Public/Granted literature
Information query
Patent Agency Ranking
0/0