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    Method of forming high resistivity regions in GaAs by deuteron implantation
    2.
    发明授权
    Method of forming high resistivity regions in GaAs by deuteron implantation 失效
    通过氘核植入在GaAs中形成高电阻率区域的方法

    公开(公告)号：US4394180A

    公开(公告)日：1983-07-19

    申请号：US158871

    申请日：1980-06-12

    Applicant: Geoffrey Dearnaley ,  Kenneth Steeples ,  Ian J. Saunders

    Inventor： Geoffrey Dearnaley ,  Kenneth Steeples ,  Ian J. Saunders

    IPC: A24C1/04 ,  H01L21/263

    CPC classification number: A24C1/04 ,  Y10S148/084

    Abstract: A process for producing regions of high resistivity in gallium arsenide, and other related compounds and mixed crystals which show electrical behavior which is similar to that of gallium arsenide, in which deuterons are implanted into a substrate made of the semi-conductor body with energies up to a maximum value corresponding to a desired depth of penetration into the body. Apparatus for carrying out the process also is described.

    Abstract translation: 制造砷化镓中高电阻率区域的方法，以及显示类似于砷化镓的电气行为的其它相关化合物和混合晶体，其中氘核被注入到由半导体体制成的衬底中，具有能量 达到对应于期望穿入体内深度的最大值。 还描述了用于执行该过程的装置。

    Real-time in-line testing of semiconductor wafers
    4.
    发明申请
    Real-time in-line testing of semiconductor wafers 有权
    半导体晶圆的实时在线测试

    公开(公告)号：US20050196882A1

    公开(公告)日：2005-09-08

    申请号：US10795032

    申请日：2004-03-05

    Applicant: Kenneth Steeples

    Inventor： Kenneth Steeples

    IPC: G01R31/265 ,  G01R31/28 ,  H01L21/66 ,  G01R31/26

    CPC classification number: G01R31/2656 ,  G01R31/2831

    Abstract: A method and apparatus for measuring damage of an ion implanted semiconductor wafer during semiconductor processing. The method includes the steps of conveying the wafer such that a surface of the wafer is substantially parallel to a surface photovoltage electrode of a head assembly during the semiconductor processing and exposing at least a portion of said wafer to light having a wavelength, and an intensity and modulating the light intensity at a predefined frequency. The method also includes the step of varying the frequency of the light intensity modulation and detecting the surface photovoltage in response to light modulated at the various frequencies using the surface photovoltage electrode. The method then calculates an electrical property of the wafer from the photovoltage induced at the surface of the wafer at each of the light intensity modulation frequencies.

    Abstract translation: 一种用于在半导体处理期间测量离子注入的半导体晶片的损伤的方法和装置。 该方法包括以下步骤：在半导体处理期间，晶片的表面基本上平行于头部组件的表面光电压电极，并将所述晶片的至少一部分暴露于具有波长的光和强度 并以预定的频率调制光强度。 该方法还包括以下步骤：响应于使用表面光电压电极以各种频率调制的光，改变光强度调制的频率并检测表面光电压。 该方法然后根据在每个光强度调制频率处在晶片表面处感应的光电压来计算晶片的电性能。

    Method and apparatus for forming an oxide layer on semiconductors
    5.
    发明申请
    Method and apparatus for forming an oxide layer on semiconductors 审中-公开
    在半导体上形成氧化物层的方法和装置

    公开(公告)号：US20080020549A1

    公开(公告)日：2008-01-24

    申请号：US11490491

    申请日：2006-07-20

    Applicant: Edward Tsidilkovski ,  Kenneth Steeples

    Inventor： Edward Tsidilkovski ,  Kenneth Steeples

    IPC: H01L21/00

    CPC classification number: C23C8/12 ,  H01J61/52 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

    Abstract: A method and apparatus for forming an oxide layer on semiconductors using a combination of ultraviolet rays and heat. The apparatus comprises a chamber having a top surface and a bottom surface and defining a wafer holding cavity; an ultraviolet source at the top surface of said chamber; an infrared source at the bottom surface of the chamber; and an oxygen gas inlet for passing oxygen gas through the chamber. Oxygen gas entering the chamber through the oxygen gas inlet is ionized by ultraviolet rays from the ultraviolet source and reacts with the silicon wafer to create an oxide layer on the silicon wafer in the cavity. Infrared radiation from the infrared source heats the silicon wafer to accelerate the creation of the oxide layer on said silicon wafer.

    Abstract translation: 一种使用紫外线和热的组合在半导体上形成氧化物层的方法和装置。 该装置包括具有顶表面和底表面并限定晶片保持腔的腔室; 在所述室的顶表面处的紫外线源; 在室的底表面处的红外源; 以及用于使氧气通过室的氧气入口。 通过氧气入口进入室的氧气通过来自紫外线源的紫外线电离并与硅晶片反应，以在空腔中的硅晶片上产生氧化层。 来自红外源的红外辐射加热硅晶片以加速在所述硅晶片上产生氧化物层。

    Semiconductor wafer metrology apparatus and methods
    6.
    发明申请
    Semiconductor wafer metrology apparatus and methods 失效
    半导体晶圆计量仪器及方法

    公开(公告)号：US20060279311A1

    公开(公告)日：2006-12-14

    申请号：US11376755

    申请日：2006-03-14

    Applicant: Kenneth Steeples

    Inventor： Kenneth Steeples

    IPC: G01R31/26

    CPC classification number: H01L22/14 ,  G01R31/2648 ,  G01R31/311 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered.

    Abstract translation: 本发明涉及包括热处理装置和改进缺陷检测的方法的本文公开的计量方法和相关装置的使用。 具体地说，一方面，本发明涉及对半导体晶片进行热处理的方法，使得实现间隙缺陷迁移的加速，同时留下空缺缺陷基本上不改变。

    Probes and methods for semiconductor wafer analysis
    7.
    发明申请
    Probes and methods for semiconductor wafer analysis 审中-公开
    半导体晶圆分析的探针和方法

    公开(公告)号：US20080036464A1

    公开(公告)日：2008-02-14

    申请号：US11881730

    申请日：2007-07-27

    Applicant: Kenneth Steeples ,  Edward Tsidilkovski ,  William Goldfarb

    Inventor： Kenneth Steeples ,  Edward Tsidilkovski ,  William Goldfarb

    IPC: G01N27/60

    CPC classification number: G01R31/311 ,  G01R1/07 ,  G01R31/2648

    Abstract: A probe adapted for characterization of a semiconductor wafer having a surface. In one embodiment, the probe includes a source of modulated light; an optical fiber in optical communication with the source of modulated light, the optical fiber having a face and comprises a fiber core; and a transparent conductive layer coating the face of the optical fiber. Light from the source of modulated light is directed along the fiber core of the optical fiber through the face of the optical fiber to the surface of the semiconductor wafer. The optically transparent conductive layer detects charges from the surface of the semiconductor wafer.

    Abstract translation: 一种用于表征具有表面的半导体晶片的探针。 在一个实施例中，探针包括调制光源; 与调制光源光学通信的光纤，所述光纤具有面并且包括光纤芯; 以及涂覆光纤的表面的透明导电层。 来自调制光源的光沿着光纤的光纤芯通过光纤的表面引导到半导体晶片的表面。 光透明导电层从半导体晶片的表面检测电荷。

    Methods for integrated implant monitoring
    8.
    发明授权
    Methods for integrated implant monitoring 有权
    综合植入物监测方法

    公开(公告)号：US07160742B2

    公开(公告)日：2007-01-09

    申请号：US10894357

    申请日：2004-07-19

    Applicant: Kenneth Steeples

    Inventor： Kenneth Steeples

    IPC: H01L21/66

    CPC classification number: H01L21/67253 ,  H01J37/304 ,  H01J37/3171

    Abstract: The invention relates to a method for real-time in-situ implantation and measurement incorporating a feedback loop to adjust the implantation dose of a substrate during the manufacturing and testing of semiconductor wafers. During processing, the substrate, such as a silicon wafer, is transported between a measuring device and an implantation device multiple times to ensure that where the beam from the implantation device hits the substrate, the doping concentration falls within the range of desired parameters.

    Abstract translation: 本发明涉及一种用于在半导体晶片的制造和测试过程中结合反馈回路来调整衬底的注入剂量的实时原位植入和测量的方法。 在处理期间，衬底（例如硅晶片）在测量装置和注入装置之间多次传输，以确保来自注入装置的光束撞击衬底的地方，掺杂浓度落在所需参数的范围内。

    Real-time in-line testing of semiconductor wafers
    9.
    发明授权
    Real-time in-line testing of semiconductor wafers 有权
    半导体晶圆的实时在线测试

    公开(公告)号：US07119569B2

    公开(公告)日：2006-10-10

    申请号：US10795032

    申请日：2004-03-05

    Applicant: Kenneth Steeples

    Inventor： Kenneth Steeples

    IPC: G01R31/26

    CPC classification number: G01R31/2656 ,  G01R31/2831

    Abstract: A method and apparatus for measuring damage of an ion implanted semiconductor wafer during semiconductor processing. The method includes the steps of conveying the wafer such that a surface of the wafer is substantially parallel to a surface photovoltage electrode of a head assembly during the semiconductor processing and exposing at least a portion of the wafer to light having a wavelength, and an intensity and modulating the light intensity at a predefined frequency. The method also includes the step of varying the frequency of the light intensity modulation and detecting the surface photovoltage in response to light modulated at the various frequencies using the surface photovoltage electrode. The method then calculates an electrical property of the wafer from the photovoltage induced at the surface of the wafer at each of the light intensity modulation frequencies.

    Abstract translation: 一种用于在半导体处理期间测量离子注入的半导体晶片的损伤的方法和装置。 该方法包括以下步骤：在半导体处理期间，使晶片的表面基本上平行于头部组件的表面光电压电极，并将晶片的至少一部分暴露于具有波长的光和强度 并以预定的频率调制光强度。 该方法还包括以下步骤：响应于使用表面光电压电极以各种频率调制的光，改变光强度调制的频率并检测表面光电压。 该方法然后根据在每个光强度调制频率处在晶片表面处感应的光电压来计算晶片的电性能。

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