Invention Grant
- Patent Title: HF-control SCR switch structure
- Patent Title (中): HF控制SCR开关结构
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Application No.: US10963384Application Date: 2004-10-12
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Publication No.: US07161191B2Publication Date: 2007-01-09
- Inventor: Samuel Menard , Christophe Mauriac
- Applicant: Samuel Menard , Christophe Mauriac
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Agent Lisa K. Jorgenson; James H. Morris
- Priority: FR0350703 20031017
- Main IPC: H01L29/74
- IPC: H01L29/74
Abstract:
A vertical SCR-type switch including a control area having a first control region forming a first diode with a first neighboring region or layer, and a second control region forming a second diode with a second neighboring region or layer. A contact is formed on each of the first and second control regions and on each of the first and second neighboring regions or layers. The contacts are connected to terminals of application of an A.C. control voltage so that, when an A.C. voltage is applied, each of the two diodes is alternately conductive.
Public/Granted literature
- US20050082566A1 HF-control SCR switch structure Public/Granted day:2005-04-21
Information query
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