发明授权
US07161773B2 High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS)
失效
具有堆叠纵向偏置叠层(LBS)的高线性密度隧道结通磁导读头
- 专利标题: High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS)
- 专利标题(中): 具有堆叠纵向偏置叠层(LBS)的高线性密度隧道结通磁导读头
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申请号: US11075079申请日: 2005-03-07
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公开(公告)号: US07161773B2公开(公告)日: 2007-01-09
- 发明人: Robert Edward Fontana, Jr. , Kuok San Ho , Tao Pan , Ching Hwa Tsang
- 申请人: Robert Edward Fontana, Jr. , Kuok San Ho , Tao Pan , Ching Hwa Tsang
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Bracewell & Giuliani LLP
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; G11B5/127
摘要:
Several embodiments of a sense current perpendicular to the planes of the sensor (CPP) and flux guide type of read head has a gap between first and second shield layers at an air bearing surface (ABS) where the flux guide is located which is less than a gap between the first and second shield layers at a recessed location where the sensor is located. This reduced gap increases the linear bit density capability of the read head. A longitudinal bias stack (LBS) is located in the sensor stack. Several unique methods of construction are described for forming the magnetic head assemblies.
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