Invention Grant
- Patent Title: NAND flash memory and blank page search method therefor
- Patent Title (中): NAND闪存和空白页搜索方法
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Application No.: US11292347Application Date: 2005-12-02
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Publication No.: US07161850B2Publication Date: 2007-01-09
- Inventor: Hitoshi Shiga , Chih-Hung Wang , Chin Hsi Lin
- Applicant: Hitoshi Shiga , Chih-Hung Wang , Chin Hsi Lin
- Applicant Address: JP Tokyo TW Jubei
- Assignee: Kabushiki Kaisha Toshiba,Solid State System Co., Ltd.
- Current Assignee: Kabushiki Kaisha Toshiba,Solid State System Co., Ltd.
- Current Assignee Address: JP Tokyo TW Jubei
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP2004-172896 20040610
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A semiconductor memory device includes a memory cell array, data buffer, and column switch. The data buffer senses the potential of a bit line to determine data in a selected memory cell and hold readout data in a read. The data buffer detects both whether the whole data buffer holds “0” data and whether the whole data buffer holds “1” data. The column switch selects part of the data buffer and connects the part to a bus.
Public/Granted literature
- US20060083065A1 NAND flash memory and blank page search method therefor Public/Granted day:2006-04-20
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