Invention Grant
- Patent Title: Low power asynchronous sense amp
- Patent Title (中): 低功率异步感应放大器
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Application No.: US10996283Application Date: 2004-11-22
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Publication No.: US07161862B1Publication Date: 2007-01-09
- Inventor: Mou C. Lin , Zheng Chen , Larry R. Fenstermaker
- Applicant: Mou C. Lin , Zheng Chen , Larry R. Fenstermaker
- Applicant Address: US OR Hillsboro
- Assignee: Lattice Semiconductor Corporation
- Current Assignee: Lattice Semiconductor Corporation
- Current Assignee Address: US OR Hillsboro
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A memory sense amplifier includes an output and a complement output. The sense amplifier is configured such that a memory cell driving the bit line low enables latching of the bit line low by enabling pull-up of the complement output, and the memory cell driving the complement bit line low enables latching of the complement bit line low by enabling pull-up of the output.
Information query
