发明授权
- 专利标题： Magneto-resistive element
- 专利标题（中）： 磁阻元件
-
申请号： US10848742申请日： 2004-05-17
-
公开(公告)号： US07163755B2公开(公告)日： 2007-01-16
- 发明人: Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
- 申请人： Masayoshi Hiramoto , Nozomu Matukawa , Akihiro Odagawa , Kenji Iijima , Hiroshi Sakakima
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Hamre, Schumann, Mueller & Larson, P.C.
- 优先权： JP2000-249340 20000821; JP2000-330254 20001030
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 μm2.
公开/授权文献
- US20040213071A1 Magneto-resistive element 公开/授权日：2004-10-28
信息查询
IPC分类:
