发明授权
- 专利标题： Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device
- 专利标题（中）： 电极，其制造方法，铁电存储器和半导体器件
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申请号： US10805238申请日： 2004-03-22
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公开(公告)号： US07163828B2公开(公告)日： 2007-01-16
- 发明人: Takeshi Kijima , Koji Ohashi , Eiji Natori
- 申请人： Takeshi Kijima , Koji Ohashi , Eiji Natori
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2003-080232 20030324; JP2003-275928 20030717
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention relates to a method of manufacturing an electrode which includes forming an electrode over a substrate. Initial crystal nuclei of an electrode material are formed over the substrate in an island pattern, and then grown layers of the electrode material are formed by causing the initial crystal nuclei to be grown. A substrate temperature when forming the initial crystal nuclei is higher than a substrate temperature when forming the grown layers.
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