Invention Grant
- Patent Title: Substrate for stressed systems and method of making same
- Patent Title (中): 强化系统基板及其制作方法
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Application No.: US11287379Application Date: 2005-11-28
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Publication No.: US07163873B2Publication Date: 2007-01-16
- Inventor: Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
- Applicant: Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0306568 20030530
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.
Public/Granted literature
- US20060079070A1 Substrate for stressed systems and method of making same Public/Granted day:2006-04-13
Information query
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