Invention Grant
- Patent Title: Ferroelectric thin film manufacturing method, ferroelectric element manufacturing method, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus
- Patent Title (中): 铁电薄膜制造方法，铁电体制造方法，表面声波元件，频率滤波器，振荡器，电子电路和电子设备
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Application No.: US10803479Application Date: 2004-03-18
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Publication No.: US07163874B2Publication Date: 2007-01-16
- Inventor: Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
- Applicant: Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2003-085760 20030326
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A ferroelectric element manufacturing method includes the steps of forming a buffer layer, which also functions as a sacrificial layer, on a single crystal substrate, forming a ferroelectric film on the buffer layer, separating the ferroelectric film and the single crystal substrate, and arranging the ferroelectric film that was separated from the single crystal substrate on an optional substrate.
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