公开(公告)号：US07950282B2

公开(公告)日：2011-05-31

申请号：US12053011

申请日：2008-03-21

Applicant: Takamitsu Higuchi ,  Yasuhiro Ono

Inventor： Takamitsu Higuchi ,  Yasuhiro Ono

IPC: G01P15/09

CPC classification number: G01P15/097 ,  G01P15/0802

Abstract: An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer and having a base section affixed to the vibration section forming layer and two beam sections extending from the base section, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on each of the beam sections; the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency; and the detection circuit detects a change in the frequency of vibrations of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the beam sections extend, and outputs a signal corresponding to the acceleration based on the change in the frequency.

Abstract translation: 加速度传感器包括：压电振动装置; 振荡电路; 以及检测电路，其中所述压电振动装置包括基板，形成在所述基板上的绝缘层，形成在所述绝缘层上方的振动部分形成层，在穿过所述振动的第一开口部中以悬臂形状形成的振动部分 截面形成层，并且具有固定在振动部分形成层上的基部和从基部延伸的两个梁部，穿过绝缘层并形成在第一开口部和振动部下方的第二开口部，以及压电元件 每个梁段上形成的截面; 振荡电路以共振频率振动压电振动装置; 并且检测电路检测由沿光束部分延伸的方向施加的加速度引起的压电振动装置的振动频率的变化，并且基于频率的变化输出与加速度相对应的信号。

公开(公告)号：US20100013894A1

公开(公告)日：2010-01-21

申请号：US12556232

申请日：2009-09-09

Applicant: Mayumi Ueno ,  Takamitsu Higuchi ,  Takeshi Kijima

Inventor： Mayumi Ueno ,  Takamitsu Higuchi ,  Takeshi Kijima

IPC: B41J2/045

CPC classification number: H01L41/18 ,  B41J2/14201 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/318 ,  H03H9/02031 ,  H03H9/02574

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1

Abstract translation: 一种压电层压板，包括在基底上形成的底部和第一压电层，并包括铌酸钾钠。 第一压电层由组成式（KaNa1-a）xNbO3表示，组成式中的“a”和“x”分别为0.1

公开(公告)号：US07596840B2

公开(公告)日：2009-10-06

申请号：US11190038

申请日：2005-07-26

Applicant: Setsuya Iwashita ,  Takamitsu Higuchi

Inventor： Setsuya Iwashita ,  Takamitsu Higuchi

IPC: H04R17/10 ,  B44C1/165

CPC classification number: H01L41/319 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/0542 ,  H03H9/173 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49128 ,  Y10T29/49156

Abstract: To provide a method for manufacturing a piezoelectric thin film resonator with excellent characteristics. A method for manufacturing a piezoelectric thin film resonator in accordance with the present invention includes a step of forming a laminated body by successively laminating, above a first substrate, a piezoelectric thin film and a first electrode, a step of bonding a second substrate and the laminated body, a step of separating the first substrate from the laminated body, a step of forming a second electrode above the piezoelectric thin film, and a step of patterning the second electrode, the piezoelectric thin film and the first electrode.

Abstract translation: 提供一种制造具有优异特性的压电薄膜谐振器的方法。 根据本发明的压电薄膜谐振器的制造方法包括：通过在第一基板上方依次层叠形成压电薄膜和第一电极而形成层压体的步骤，接合第二基板和 层压体，从层叠体分离第一基板的步骤，在压电薄膜的上方形成第二电极的工序，以及对第二电极，压电薄膜和第一电极进行图案化的工序。

公开(公告)号：US20080229824A1

公开(公告)日：2008-09-25

申请号：US12050228

申请日：2008-03-18

Applicant: Takamitsu HIGUCHI ,  Yasuhiro ONO

Inventor： Takamitsu HIGUCHI ,  Yasuhiro ONO

IPC: G01P1/00 ,  H02N2/04

CPC classification number: G01C19/5621

Abstract: An angular rate sensor includes: a piezoelectric vibration device; and a detection section, wherein the piezoelectric vibration device includes a base substrate, a vibration section having a fixed end affixed to the base substrate and a free end that does not contact the base substrate, and a driving section formed above the vibration section for generating flexural vibration of the vibration section; the vibration section has a first support section, four (first-fourth) cantilever sections supported by the first support section, and a second support section that supports the first support section and equipped with the fixed end; the first support section has two center lines that are orthogonal to each other; the first cantilever section and the second cantilever section are symmetrical to each other through one of the center lines of the first support section in a plan view; the third cantilever section and the fourth cantilever section are symmetrical to each other through the one of the center lines of the first support section in a plan view; the first cantilever section and the fourth cantilever section are symmetrical to each other through the other of the center lines of the first support section in a plan view; the second cantilever section and the third cantilever section are symmetrical to each other through the other of the center lines of the first support section in a plan view; the driving section includes a lower electrode for driving section, a piezoelectric layer for driving section formed above the lower electrode for driving section, and an upper electrode for driving section formed above the piezoelectric layer for driving section; and the detection section is formed above the vibration section for detecting an angular rate of rotation applied to the vibration section, and has a lower electrode for detection section, a piezoelectric layer for detection section formed above the lower electrode for detection section, and an upper electrode for detection section formed above the piezoelectric layer for detection section.

公开(公告)号：US07310862B2

公开(公告)日：2007-12-25

申请号：US11000517

申请日：2004-11-30

Applicant: Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

Inventor： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

IPC: H01L41/22

CPC classification number: B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  C23C14/08 ,  C23C14/28 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49005 ,  Y10T29/49007

Abstract: A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer which partially has a layer formed by an ion beam assisted laser ablation method while controlling a temperature rise accompanied by an ion beam irradiation by a cooling device and is bi-axially oriented as a whole, is formed on a surface of a substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.

Abstract translation: 提供了一种有效地制造具有在期望方向上排列的晶体取向的压电薄膜的压电装置的方法。 在衬底的表面上形成部分地具有通过离子束辅助激光烧蚀法形成的层的中间层，同时控制伴随着冷却装置的离子束照射并且作为整体的双轴取向的温度升高。 在中间层上形成下电极。 在下电极上形成压电薄膜。 在压电膜上形成上电极。 下电极和压电膜通过外延生长形成。

公开(公告)号：US07258742B2

公开(公告)日：2007-08-21

申请号：US10916208

申请日：2004-08-11

Applicant: Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

Inventor： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

IPC: C30B25/02

CPC classification number: H03H9/02543 ,  C30B19/00 ,  C30B19/12 ,  C30B29/30 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/0542

Abstract: A method of manufacturing KNbO3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and electronic device employ the thin film manufactured by the method, and have high k2, and are wideband, reduced in size and economical in power consumption. A plasma plume containing K, Nb, and O in the range 0.5≦x≦xE is supplied to a substrate, where x is a mole ratio of niobium (Nb) to potassium (K) in KxNb1−xOy, and xE is a mole composition ratio at the eutectic point for KNbO3 and 3K2O.Nb2O5 under a predetermined oxygen partial pressure. Maintaining the temperature Ts of the substrate in the range TE≦Ts≦Tm where TE represents the temperature at the eutectic point and Tm represents a complete melting temperature, the KNbO3 single crystal is precipitated from the KxNb1−xOy deposited on the substrate.

Abstract translation: 在单晶基板上制造具有单相高质量和优异形态的KNbO 3 单晶薄膜的方法。 表面声波元件，频率滤波器，频率振荡器，电子电路和电子器件采用该方法制造的薄膜，并且具有高k 2，并且是宽带的，尺寸减小且经济 能量消耗。 将含有0.5 <= X <= X 的K，Nb和O的等离子体羽流供给到基底，其中x是铌（Nb）与钾（K）的摩尔比， 在N x Nb 1-x O y y中，x E是在共晶点处的摩尔组成比 在预定的氧分压下的KNbO 3 3和3K 2 O 2 N 2 O 5 O 3。 保持基板的温度T 在范围T T E表示共晶点处的温度，T≠表示完全熔融温度，KNbO 3单晶从K铌Nb析出 沉积在衬底上的1-x O 2 O 3。

公开(公告)号：US07244016B2

公开(公告)日：2007-07-17

申请号：US11002964

申请日：2004-12-02

Applicant: Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa ,  Satoshi Nebashi

Inventor： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa ,  Satoshi Nebashi

IPC: B41J2/045

CPC classification number: B41J2/14233

Abstract: An ink jet head is provided that can effectively suppress operational interferences among adjacent cavities, and is capable of ultra-high-density and high-speed printing. The ink jet head is equipped with a plurality of cavities each having a volume that is variable by a deformation operation of a piezoelectric element, wherein beam members are provided between inner walls that interpose the cavity.

Abstract translation: 提供了可以有效地抑制相邻空腔之间的操作干扰的喷墨头，并且能够进行超高密度和高速打印。 喷墨头配备有多个空腔，每个空腔具有通过压电元件的变形操作而变化的体积，其中梁构件设置在插入空腔的内壁之间。

公开(公告)号：US20070045109A1

公开(公告)日：2007-03-01

申请号：US11511663

申请日：2006-08-29

Applicant: Takeshi Kijima ,  Takamitsu Higuchi

Inventor： Takeshi Kijima ,  Takamitsu Higuchi

IPC: C23C14/00

CPC classification number: C23C14/3414 ,  C04B35/493 ,  C04B35/497 ,  C04B35/6264 ,  C04B35/6325 ,  C04B35/6346 ,  C04B2235/3234 ,  C04B2235/3239 ,  C04B2235/3248 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/768 ,  C23C14/088 ,  H01L21/31691 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/316

Abstract: An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.

Abstract translation: 一种用于获得由通式AB 1-X C X O 3 3表示的绝缘复合氧化物膜的绝缘靶材料，包括 至少Pb，包含Zr，Ti，V，W和Hf中的至少一种的元素B和包含Nb和Ta中的至少一种的元素C.

公开(公告)号：US07163874B2

公开(公告)日：2007-01-16

申请号：US10803479

申请日：2004-03-18

Applicant: Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

Inventor： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa

IPC: H01L21/30

CPC classification number: H01L21/02197 ,  C30B5/00 ,  C30B29/22 ,  C30B29/32 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/0478 ,  H01L41/1873 ,  H01L41/314 ,  H01L41/319 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/0542

Abstract: A ferroelectric element manufacturing method includes the steps of forming a buffer layer, which also functions as a sacrificial layer, on a single crystal substrate, forming a ferroelectric film on the buffer layer, separating the ferroelectric film and the single crystal substrate, and arranging the ferroelectric film that was separated from the single crystal substrate on an optional substrate.

Abstract translation: 铁电体元件的制造方法包括以下步骤：在单晶基板上形成也用作牺牲层的缓冲层，在缓冲层上形成强电介质膜，分离强电介质膜和单晶基板， 在任选的衬底上与单晶衬底分离的铁电体膜。

公开(公告)号：US20060222895A1

公开(公告)日：2006-10-05

申请号：US11389985

申请日：2006-03-27

Applicant: Takamitsu Higuchi ,  Takeshi Kijima ,  Mayumi Ueno

Inventor： Takamitsu Higuchi ,  Takeshi Kijima ,  Mayumi Ueno

IPC: B05D5/12 ,  B05D3/02

CPC classification number: H01L41/0815 ,  H01L41/1873 ,  H01L41/318 ,  H01L41/319 ,  Y10T29/42

Abstract: A piezoelectric film laminate including a sapphire substrate and a lead zirconate titanate niobate film and a potassium niobate film formed on the sapphire substrate.