- 专利标题： Semiconductor integrated circuit device and process for manufacturing the same
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申请号： US10917289申请日： 2004-08-13
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公开(公告)号： US07163886B2公开(公告)日： 2007-01-16
- 发明人: Tsuyoshi Fujiwara , Masahiro Ushiyama , Katsuhiko Ichinose , Naohumi Ohashi , Tetsuo Saito
- 申请人： Tsuyoshi Fujiwara , Masahiro Ushiyama , Katsuhiko Ichinose , Naohumi Ohashi , Tetsuo Saito
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Hitachi Tokyo Electronics Co., Ltd.,Renesas Technology Corp.
- 当前专利权人： Hitachi Tokyo Electronics Co., Ltd.,Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.
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