Invention Grant
US07163891B2 High density DRAM with reduced peripheral device area and method of manufacture
有权
高密度DRAM具有减少的外围设备面积和制造方法
- Patent Title: High density DRAM with reduced peripheral device area and method of manufacture
- Patent Title (中): 高密度DRAM具有减少的外围设备面积和制造方法
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Application No.: US11003592Application Date: 2004-12-03
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Publication No.: US07163891B2Publication Date: 2007-01-16
- Inventor: Michael Maldei , Brian Cousineau , Guenter Gerstmeier , Jon S. Berry, II , Steven M. Baker , Jinhwan Lee
- Applicant: Michael Maldei , Brian Cousineau , Guenter Gerstmeier , Jon S. Berry, II , Steven M. Baker , Jinhwan Lee
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Brinks Hofer Gilson & Lione
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.
Public/Granted literature
- US20050130352A1 High density DRAM with reduced peripheral device area and method of manufacture Public/Granted day:2005-06-16
Information query
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