发明授权
- 专利标题： Photovoltaic device and manufacturing method thereof
- 专利标题（中）： 光伏器件及其制造方法
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申请号： US10378609申请日： 2003-03-05
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公开(公告)号： US07164150B2公开(公告)日： 2007-01-16
- 发明人: Akira Terakawa , Toshio Asaumi
- 申请人： Akira Terakawa , Toshio Asaumi
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权： JP2002/059393 20020305
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L31/20
摘要：
In a photovoltaic device of the present invention, junction characteristics are improved by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon semiconductor. In the photovoltaic device, an n-type crystalline substrate (11) and a p-type amorphous silicon thin film (13) are laminated with an i-type amorphous silicon thin film (12) interposed as well as an n-type amorphous silicon thin film (15) is provided on a rear surface of the crystalline silicon substrate (11) by interposing an i-type amorphous silicon thin film (14) between them. Oxygen atoms exist at interfaces between the crystalline silicon substrate (11) and the i-type amorphous silicon thin films (12), (14) in a higher concentration than that in the i-type amorphous silicon thin films (12), (14).
公开/授权文献
- US20030168660A1 Photovoltaic device and manufacturing method thereof 公开/授权日：2003-09-11