发明授权
US07166199B2 Magnetron sputtering systems including anodic gas distribution systems 有权
包括阳极气体分配系统的磁控溅射系统

  • 专利标题: Magnetron sputtering systems including anodic gas distribution systems
  • 专利标题(中): 包括阳极气体分配系统的磁控溅射系统
  • 申请号: US10323703
    申请日: 2002-12-18
  • 公开(公告)号: US07166199B2
    公开(公告)日: 2007-01-23
  • 发明人: Klaus Hartig
  • 申请人: Klaus Hartig
  • 申请人地址: US MN Eden Prairie
  • 专利权人: Cardinal CG Company
  • 当前专利权人: Cardinal CG Company
  • 当前专利权人地址: US MN Eden Prairie
  • 代理机构: Fredrikson & Byron, P.A.
  • 主分类号: C23C14/35
  • IPC分类号: C23C14/35
Magnetron sputtering systems including anodic gas distribution systems
摘要:
The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a power source which supplies positive and negative charge, and a gas distribution system. The gas distribution system may comprise a simple perforated gas delivery member, or it may comprise a perforated gas delivery member with an attached conductive anodic surface. The gas delivery member may also contain an inner conduit with further perforations which serves to baffle flow of the sputtering gas. Gas flow may be regulated within discrete portions of the gas distribution system. The anodic surfaces of the gas distribution system are cleaned through the action of plasma and gas flow, creating a more stable plasma and reducing the need for maintenance.
信息查询
0/0