发明授权
US07166544B2 Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
有权
通过使用粘性前体的化学气相沉积法沉积功能梯度电介质膜的方法
- 专利标题： Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
- 专利标题（中）： 通过使用粘性前体的化学气相沉积法沉积功能梯度电介质膜的方法
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申请号： US10931609申请日： 2004-09-01
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公开(公告)号： US07166544B2公开(公告)日： 2007-01-23
- 发明人: Deenesh Padhi , Sohyun Park , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
- 申请人： Deenesh Padhi , Sohyun Park , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Townsend and Townsend and Crew LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.
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