发明授权
US07166859B2 Organic semiconductor transistor element, semiconductor device using the same, and process for producing the semiconductor device
有权
有机半导体晶体管元件,使用其的半导体器件以及半导体器件的制造方法
- 专利标题: Organic semiconductor transistor element, semiconductor device using the same, and process for producing the semiconductor device
- 专利标题(中): 有机半导体晶体管元件,使用其的半导体器件以及半导体器件的制造方法
-
申请号: US10959224申请日: 2004-10-07
-
公开(公告)号: US07166859B2公开(公告)日: 2007-01-23
- 发明人: Hidekazu Hirose , Mieko Seki , Daisuke Okuda , Tadayoshi Ozaki , Takeshi Agata , Toru Ishii , Kiyokazu Mashimo , Katsuhiro Sato , Hiroaki Moriyama , Yohei Nishino
- 申请人: Hidekazu Hirose , Mieko Seki , Daisuke Okuda , Tadayoshi Ozaki , Takeshi Agata , Toru Ishii , Kiyokazu Mashimo , Katsuhiro Sato , Hiroaki Moriyama , Yohei Nishino
- 申请人地址: JP Kanagawa
- 专利权人: Fuji Xerox Co., Ltd.
- 当前专利权人: Fuji Xerox Co., Ltd.
- 当前专利权人地址: JP Kanagawa
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2003-386590 20031117
- 主分类号: H01L29/08
- IPC分类号: H01L29/08
摘要:
The present invention provides an organic semiconductor transistor element that includes at least a source electrode, a drain electrode, an organic semiconductor formed to be electrically conductive to the source electrode and the drain electrode, and a gate electrode which is both insulated from the organic semiconductor and capable of applying an electric field. The organic semiconductor includes a polymer compound containing an aromatic tertiary amine.