发明授权
- 专利标题： Metal interconnect features with a doping gradient
- 专利标题（中）： 具有掺杂梯度的金属互连特性
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申请号： US10913759申请日： 2004-08-06
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公开(公告)号： US07169700B2公开(公告)日： 2007-01-30
- 发明人: Chung Liang Chang , Ming Hsing Tsai , Winston Sue
- 申请人： Chung Liang Chang , Ming Hsing Tsai , Winston Sue
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Tung & Associates
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.
公开/授权文献
- US20060027460A1 Metal interconnect features with a doping gradient 公开/授权日：2006-02-09
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