Invention Grant
- Patent Title: Semi-insulating GaN and method of making the same
- Patent Title (中): 半绝缘GaN及其制造方法
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Application No.: US10618024Application Date: 2003-07-11
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Publication No.: US07170095B2Publication Date: 2007-01-30
- Inventor: Robert P. Vaudo , Xueping Xu , George R. Brandes
- Applicant: Robert P. Vaudo , Xueping Xu , George R. Brandes
- Applicant Address: US NC Durham
- Assignee: Cree Inc.
- Current Assignee: Cree Inc.
- Current Assignee Address: US NC Durham
- Agency: Intellectual Property/Technology Law
- Agent Vincent K. Gustafson
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/20 ; C23C16/24
Abstract:
Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The large-area, semi-insulating gallium nitride is readily formed by doping the growing gallium nitride material during growth thereof with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.
Public/Granted literature
- US20050009310A1 Semi-insulating GaN and method of making the same Public/Granted day:2005-01-13
Information query
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