Invention Grant
- Patent Title: MRAM cell with reduced write current
- Patent Title (中): 降低写入电流的MRAM单元
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Application No.: US11030453Application Date: 2005-01-06
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Publication No.: US07170775B2Publication Date: 2007-01-30
- Inventor: Wen Chin Lin , Denny D. Tang , Li-Shyue Lai
- Applicant: Wen Chin Lin , Denny D. Tang , Li-Shyue Lai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A magnetic random access memory (MRAM) cell that includes an MRAM stack and a conductive line for carrying write current associated with the MRAM cell. The conductive line is oriented in a direction that is angularly offset from an easy axis of the MRAM stack by an acute angle, such as about 45 degrees.
Public/Granted literature
- US20060146602A1 MRAM cell with reduced write current Public/Granted day:2006-07-06
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