发明授权
- 专利标题: Semiconductor pressure sensor
- 专利标题(中): 半导体压力传感器
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申请号: US11319668申请日: 2005-12-29
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公开(公告)号: US07171858B1公开(公告)日: 2007-02-06
- 发明人: Masao Kanatani , Masaaki Taruya , Hiroshi Nakamura
- 申请人: Masao Kanatani , Masaaki Taruya , Hiroshi Nakamura
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2005-263709 20050912
- 主分类号: G01L9/00
- IPC分类号: G01L9/00
摘要:
A semiconductor pressure sensor is intended to achieve reduction in size and cost by decreasing the number of terminals and the number of pads. In the semiconductor pressure sensor, in a first mode in which correction data is input to a memory, a voltage input change-over switch and an input/output change-over switch are operated by an input signal from a switch change-over terminal in such a manner that a voltage input terminal and an input/output terminal are connected to a digital circuit, whereas in a second mode in which an electric signal corrected and amplified is output, the voltage input change-over switch is connected to a semiconductor sensor chip by means of an input signal from the switch change-over terminal, and the input/output terminal is connected to a correction and amplification circuit.
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