Invention Grant
- Patent Title: Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
- Patent Title (中): 在硅/硅锗外延层中引入碳以提高Si-Ge双极技术的产量
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Application No.: US10953378Application Date: 2004-09-29
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Publication No.: US07173274B2Publication Date: 2007-02-06
- Inventor: Jack Oon Chu , Douglas Duane Coolbaugh , James Stuart Dunn , David R. Greenberg , David L. Harame , Basanth Jagannathan , Robb Allen Johnson , Louis D. Lanzerotti , Kathryn Turner Schonenberg , Ryan Wayne Wuthrich
- Applicant: Jack Oon Chu , Douglas Duane Coolbaugh , James Stuart Dunn , David R. Greenberg , David L. Harame , Basanth Jagannathan , Robb Allen Johnson , Louis D. Lanzerotti , Kathryn Turner Schonenberg , Ryan Wayne Wuthrich
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent William D. Sabo, Esq.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0339
Abstract:
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
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