发明授权
- 专利标题： Photodiode having extended well region
- 专利标题（中）： 具有扩展井区的光电二极管
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申请号： US11350296申请日： 2006-02-07
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公开(公告)号： US07173299B1公开(公告)日： 2007-02-06
- 发明人: Clifford I. Drowley , Ching-Chun Wang , Jungwook Yang
- 申请人： Clifford I. Drowley , Ching-Chun Wang , Jungwook Yang
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113
摘要：
A semiconductor imager structure having a photodiode being provided as a well region formed within a substrate layer and a transistor electrically connected to the photodiode and having a terminal that has a same electrical potential as the photodiode. The well region of the photodiode having an extended portion so that at least a portion of the terminal of the transistor has the same electrical potential as the photodiode is formed within the extended portion of the well region of the photodiode.
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