发明授权
US07173302B2 Integrated circuit arrangement having capacitors and having planar transistors and fabrication method
有权
具有电容器并具有平面晶体管和制造方法的集成电路装置
- 专利标题: Integrated circuit arrangement having capacitors and having planar transistors and fabrication method
- 专利标题(中): 具有电容器并具有平面晶体管和制造方法的集成电路装置
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申请号: US10531493申请日: 2003-10-10
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公开(公告)号: US07173302B2公开(公告)日: 2007-02-06
- 发明人: Ralf Brederlow , Jessica Hartwich , Christian Pacha , Wolfgang Rösner , Thomas Schulz
- 申请人: Ralf Brederlow , Jessica Hartwich , Christian Pacha , Wolfgang Rösner , Thomas Schulz
- 申请人地址: DE Munich
- 专利权人: Infineon technologies AG
- 当前专利权人: Infineon technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Brinks Hofer Gilson & Lione
- 优先权: DE10248723 20021018
- 国际申请: PCT/DE03/03354 WO 20031010
- 国际公布: WO2004/038802 WO 20040506
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L21/8242
摘要:
An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is described. The integrated circuit arrangement contains an insulating region and a sequence of regions which forms a capacitor. The sequence contains a near electrode region near the insulating region, a dielectric region, and a remote electrode region remote from the insulating region. The insulating region is part of an insulating layer arranged in a plane. The capacitor and an active component are arranged on the same side of the insulating layer and form a memory cell. The near electrode region and an active region of the component are arranged in a plane which lies parallel to the plane in which the insulating layer is arranged. A processor is also contained in the integrated circuit arrangement.