发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10972410申请日： 2004-10-26
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公开(公告)号： US07173333B2公开(公告)日： 2007-02-06
- 发明人: Toshiyuki Hata , Takamitsu Kanazawa , Takeshi Otani
- 申请人： Toshiyuki Hata , Takamitsu Kanazawa , Takeshi Otani
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly, Stanger, Malur & Brundidge, .P.C.
- 优先权： JP2003-404762 20031203
- 主分类号： H01L23/34
- IPC分类号： H01L23/34 ; H01L23/495 ; H01L29/80 ; H01L31/0328
摘要：
A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.
公开/授权文献
- US20050121777A1 Semiconductor device 公开/授权日：2005-06-09
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