发明授权
- 专利标题: Film bulk acoustic wave resonator
- 专利标题(中): 薄膜体声波谐振器
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申请号: US11028992申请日: 2005-01-03
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公开(公告)号: US07173361B2公开(公告)日: 2007-02-06
- 发明人: Hisatoshi Saito , Takao Noguchi , Kenji Inoue
- 申请人: Hisatoshi Saito , Takao Noguchi , Kenji Inoue
- 申请人地址: JP
- 专利权人: TDK Corporation
- 当前专利权人: TDK Corporation
- 当前专利权人地址: JP
- 代理机构: Young Law Firm, P.C.
- 优先权: JP2004-001535 20040107
- 主分类号: H01L41/08
- IPC分类号: H01L41/08 ; H03H9/54
摘要:
A film bulk acoustic wave resonator of the invention includes a substrate; a resonant structure provided on the substrate constituted by a lower electrode, a piezoelectric film and an upper electrode; and an acoustic multilayer of a plurality of reflective films provided between the substrate and the resonant structure. At least one of the reflective films of the acoustic multilayer has a specified crystal plane orientation, and an X-ray rocking curve full width at half maximum that is preferably not greater than 10 degrees, and more preferably is not greater than 3 degrees. This makes it possible to obtain better resonance characteristics than in the case of the prior art, by increasing the efficiency with which bulk waves propagating towards the substrate are reflected.
公开/授权文献
- US20050189846A1 Film bulk acoustic wave resonator 公开/授权日:2005-09-01
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