发明授权
US07173471B2 High frequency switching circuit and semiconductor device 有权
高频开关电路和半导体器件

High frequency switching circuit and semiconductor device
摘要:
Four switching circuit sections consisting of four FETs connected in series are provided between a plurality of input/output terminals which output and input a high frequency signal. Gate control voltages are individually applied to gate terminals of four FETs, respectively, so that an on-state and an off-state are achieved. Further drain control voltages are individually applied to drain terminals or source terminals of the FET in each switching circuit section, and a voltage according to an electric power value of the high frequency signal supplied to each of switching circuit sections is supplied as the gate control voltage and the drain control voltage.
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