发明授权
- 专利标题: High frequency switching circuit and semiconductor device
- 专利标题(中): 高频开关电路和半导体器件
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申请号: US10864351申请日: 2004-06-10
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公开(公告)号: US07173471B2公开(公告)日: 2007-02-06
- 发明人: Tadayoshi Nakatsuka , Atsushi Suwa , Katsushi Tara
- 申请人: Tadayoshi Nakatsuka , Atsushi Suwa , Katsushi Tara
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Stevens, Davis, Miller & Mosher, LLP
- 优先权: JP2003-168884 20030613
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
Four switching circuit sections consisting of four FETs connected in series are provided between a plurality of input/output terminals which output and input a high frequency signal. Gate control voltages are individually applied to gate terminals of four FETs, respectively, so that an on-state and an off-state are achieved. Further drain control voltages are individually applied to drain terminals or source terminals of the FET in each switching circuit section, and a voltage according to an electric power value of the high frequency signal supplied to each of switching circuit sections is supplied as the gate control voltage and the drain control voltage.
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